SEMICONDUCTOR DEVICE

摘要

According to one embodiment, a semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, a first electrode, a first insulating layer, and a second electrode. The first semiconductor region includes a first region and a second region. The second semiconductor region is provided on the first semiconductor region in the first region. The third semiconductor region is provided on the first semiconductor region in the second region. The first electrode is provided on the third semiconductor region. The first electrode is electrically connected to the third semiconductor region. The first insulating layer is provided on the first electrode. The second electrode is provided on the second semiconductor region. A portion of the second electrode is positioned on the first insulating layer.

主权项

1. A semiconductor device, comprising:
a first semiconductor region of a first conductivity type including a first region and a second region, the second region being provided around the first region; a second semiconductor region of a second conductivity type provided on the first semiconductor region in the first region; a third semiconductor region of the first conductivity type provided on the first semiconductor region in the second region; a first electrode provided on the third semiconductor region, the first electrode being electrically connected to the third semiconductor region; a first insulating layer provided on the first electrode; and a second electrode provided on the second semiconductor region, the second electrode being electrically connected to the second semiconductor region, a portion of the second electrode being positioned on the first insulating layer.