INTERCONNECT STRUCTURE FOR STACKED DEVICE AND METHOD

摘要

A stacked integrated circuit (IC) device and a method are disclosed. The stacked IC device includes a first semiconductor element and a second semiconductor element bonded on the first semiconductor element. The first semiconductor element includes a first substrate, a common conductive feature in the first substrate, a first inter-level dielectric (ILD) layer, a first interconnection feature and a conductive plug connecting the first interconnection feature to the common conductive feature. The second semiconductor element includes a second substrate, a second ILD layers over the second substrate and a second interconnection feature in second ILD layers. The device also includes a conductive deep plug connecting to the common conductive feature in the first semiconductor element and the second interconnection feature. The conductive deep plug is separated with the conductive plug by the first ILD layer.

主权项

1. A method comprising:
bonding a first semiconductor substrate having a first dielectric layer disposed thereover to a second semiconductor substrate having a second dielectric layer disposed thereover, wherein a first interconnection feature and a conductive plug are disposed within the first dielectric layer and a second interconnection feature is disposed within the second dielectric layer; removing a portion of the first semiconductor substrate to form a first trench that extends through the first semiconductor substrate to expose a portion of the first dielectric layer; forming a first material layer within the first trench; removing the exposed portion of the first dielectric layer and a portion of the second dielectric layer to form a second trench extending to the second interconnection feature; removing the first material layer from the first trench; and forming a conductive material within the first trench and the second trench.