SEMICONDUCTOR MEMORY DEVICE WITH FIRST AND SECOND SEMICONDUTOR FILMS IN FIRST AND SECOND COLUMNAR BODIES

摘要

A semiconductor memory device according to an embodiment comprises: conductive layers stacked in a vertical direction on a semiconductor substrate; and first and columnar bodies that extend in the vertical direction, the first and second columnar bodies each comprising: a first film; a second film disposed on the first film; and a semiconductor film, and the first film of the second columnar body having an upper end positioned higher than a first position lower than a first conductive layer and lower than a second position higher than the first conductive layer and a lower end positioned at or lower than the first position, and the second film of the second columnar body having an upper end positioned higher than the second position and a lower end positioned lower than the first position.

主权项

1. A semiconductor memory device, comprising:
a plurality of conductive layers stacked in a vertical direction on a semiconductor substrate; and a first columnar body and a second columnar body that extend in the vertical direction and have a side surface facing a side surface of the plurality of conductive layers, the first columnar body and the second columnar body each comprising: a first insulating film; a first semiconductor film disposed on the first insulating film; and a second semiconductor film disposed between the plurality of conductive layers and the first insulating film and between the plurality of conductive layers and the first semiconductor film, and in the case that a certain position lower than a first conductive layer included in the plurality of conductive layers is assumed to be a first position and a certain position higher than the first conductive layer is assumed to be a second position, the first semiconductor film of the first columnar body having a lower end positioned higher than the first position, the first semiconductor film of the second columnar body having a lower end penetrating into the first insulating film to lower than the first position.