SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

A semiconductor device includes a first semiconductor substrate, a second semiconductor substrate, a first metal layer located on the first semiconductor substrate, a second metal layer located on the second semiconductor substrate, a third metal layer, a first alloy layer, and a second alloy layer. The third metal layer extends between the first metal layer and the second metal layer. The first alloy layer comprises components of the first and third metal layers, and is provided between the first metal layer and the third metal layer. The second alloy layer comprises components of the second and third metal layers, and is provided between the second metal layer and the third metal layer. At least one of the first metal the second metal layers projects into the third metal layer at a circumferential edge portion thereof.

主权项

1. A semiconductor device comprising:
a first semiconductor substrate; a second semiconductor substrate facing the first semiconductor substrate; a first metal layer disposed on the first semiconductor substrate and facing the second semiconductor substrate; a second metal layer disposed on the second semiconductor substrate and facing the first metal layer; a third metal layer disposed between the first metal layer and the second metal layer; a first alloy layer disposed between the first metal layer and the third metal layer comprising a component of the first metal layer and a component of the third metal layer; and a second alloy layer disposed between the second metal layer and the third metal layer, comprising a component of the second metal layer and a component of the third metal layer, wherein at least one of the first metal layer and the second metal layer projects into the third metal layer at an edge portion thereof.