| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a power semiconductor device in which metal ribbons are bonded while being stacked, and the bonding reliability of the metal ribbon is high when compared with the prior art. <P>SOLUTION: In the power semiconductor device 100 where a first metal ribbon 111 and a second metal ribbon 112 each having a rectangular cross section are bonded to a power semiconductor element 114 while being stacked, the first metal ribbon extending continuously has a first joint 131, a third joint 133, and a second joint 132 being bonded to the power semiconductor element 114 at different positions in the extension direction, and the second metal ribbon has a fourth joint 134 located directly above the third joint and being bonded to the first metal ribbon. <P>COPYRIGHT: (C)2013,JPO&INPIT |
