| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of generating a wafer that can efficiently generate a wafer from ingot.SOLUTION: A wafer producing method for producing a wafer from a hexagonal single crystal ingot comprises a separation start point forming step for applying a laser beam of a wavelength having permeability to a hexagonal single crystal ingot to form a reformed layer parallel to the surface of the ingot and a crack extending from the reformed layer, thereby forming a separation starting point. The separation starting point forming step contains a reformed layer forming step of relatively moving the focus point of a laser beam in a direction perpendicular to a direction in which the c-axis is inclined with respect to the perpendicular of the surface by the amount corresponding to an off-angle and the off-angle is formed between the surface and a c-plane, thereby forming a linear reformed layer. The reformed layer forming step applies a laser beam while the polarization plane of the laser beam is matched with a processing direction.SELECTED DRAWING: Figure 11 |
