METHOD FOR PRODUCING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

摘要

A method for producing a semiconductor device includes a first step of forming a fin-shaped semiconductor layer on a semiconductor substrate and forming a first insulating film around the fin-shaped semiconductor layer; a second step of forming a pillar-shaped semiconductor layer and a first dummy gate formed of a first polysilicon; a third step of forming a second dummy gate on side walls of the first dummy gate and the pillar-shaped semiconductor layer; a fourth step of forming a side wall formed of a fifth insulating film around the second dummy gate, forming a second diffusion layer in an upper portion of the fin-shaped semiconductor layer and a lower portion of the pillar-shaped semiconductor layer, and forming a metal-semiconductor compound on the second diffusion layer; a fifth step of forming a gate electrode and a gate line; and a sixth step of depositing a sixth insulating film, forming a third resist for forming a contact hole on the pillar-shaped semiconductor layer, etching the sixth insulating film to form a contact hole on the pillar-shaped semiconductor layer, removing the third resist, depositing a second gate insulating film, depositing a second metal, etching back the second metal, removing the second gate insulating film on the pillar-shaped semiconductor layer so as to form a metal side wall on a side wall of an upper portion of the pillar-shaped semiconductor layer, and depositing a third metal so as to form a contact that connects an upper portion of the metal side wall to an upper portion of the pillar-shaped semiconductor layer.

主权项

1. A method for producing a semiconductor device, comprising:
a first step of forming a fin-shaped semiconductor layer on a semiconductor substrate and forming a first insulating film around the fin-shaped semiconductor layer; a second step following the first step, the second step including forming a pillar-shaped semiconductor layer and a first dummy gate formed of a first polysilicon; a third step following the second step, the third step including forming a second dummy gate on side walls of the first dummy gate and the pillar-shaped semiconductor layer; a fourth step following the third step, the fourth step including forming a side wall formed of a fifth insulating film around the second dummy gate, forming a second diffusion layer in an upper portion of the fin-shaped semiconductor layer and a lower portion of the pillar-shaped semiconductor layer, and forming a metal-semiconductor compound on the second diffusion layer; a fifth step following the fourth step, the fifth step including forming a gate electrode and a gate line; and a sixth step following the fifth step, the sixth step including depositing a sixth insulating film, forming a third resist for forming a contact hole on the pillar-shaped semiconductor layer, etching the sixth insulating film to form a contact hole on the pillar-shaped semiconductor layer, removing the third resist, depositing a second gate insulating film, depositing a second metal, etching back the second metal, removing the second gate insulating film on the pillar-shaped semiconductor layer so as to form a metal side wall on a side wall of an upper portion of the pillar-shaped semiconductor layer, and depositing a third metal so as to form a contact that connects an upper portion of the metal side wall to an upper portion of the pillar-shaped semiconductor layer.