发明名称 LATERAL SUPER-JUNCTION MOSFET DEVICE AND TERMINATION STRUCTURE
摘要 A lateral superjunction MOSFET device includes a gate structure and a first column connected to the lateral superjunction structure. The lateral superjunction MOSFET device includes the first column to receive current from the channel when the MOSFET is turned on and to distribute the channel current to the lateral superjunction structure functioning as the drain drift region. In some embodiment, the MOSFET device includes a second column disposed in close proximity to the first column. The second column disposed near the first column is used to pinch off the first column when the MOSFET device is to be turned off and to block the high voltage being sustained by the MOSFET device at the drain terminal from reaching the gate structure. In some embodiments, the lateral superjunction MOSFET device further includes termination structures for the drain, source and body contact doped region fingers.
申请公布号 US2016380097(A1) 申请公布日期 2016.12.29
申请号 US201615051438 申请日期 2016.02.23
申请人 Alpha and Omega Semiconductor Incorporated 发明人 Bobde Madhur;Guan Lingpeng;Padmanabhan Karthik;Yilmaz Hamza
分类号 H01L29/78;H01L29/40;H01L29/10;H01L29/06;H01L29/08 主分类号 H01L29/78
代理机构 代理人
主权项 1. (canceled)
地址 Sunnyvale CA US