发明名称 |
VERTICAL SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
The present invention discloses a vertical semiconductor device and a manufacturing method thereof. The vertical semiconductor device includes: a substrate having a first surface and a second surface, the substrate including a conductive array formed by multiple conductive plugs through the substrate; a semiconductor layer formed on the first surface, the semiconductor layer having a third surface and a fourth surface, wherein the fourth surface faces the first surface; a first electrode formed on the third surface; and a second electrode formed on the second surface for electrically connecting to the conductive array. |
申请公布号 |
US2016380093(A1) |
申请公布日期 |
2016.12.29 |
申请号 |
US201615260599 |
申请日期 |
2016.09.09 |
申请人 |
RICHTEK TECHNOLOGY CORPORATION |
发明人 |
Huang Tsung-Yi;Chiu Chien-Wei |
分类号 |
H01L29/778;H01L29/20;H01L29/10;H01L23/535;H01L29/08;H01L29/66;H01L29/205 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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主权项 |
1. A vertical semiconductor device, comprising:
a substrate made of a non-conductive material and having a first surface and a second surface facing opposite directions; a conductive array formed by a plurality of conductive plugs which extend from the first surface completely through the substrate to the second surface; a semiconductor layer formed on and in contact with the first surface, the semiconductor layer having a third surface and a fourth surface facing opposite directions, wherein the fourth surface faces the first surface; a first electrode formed on and in contact with the third surface; and a second electrode formed on and in contact with the second surface, for electrically connecting to the conductive array. |
地址 |
Chupei City TW |