| 摘要 |
A denuded zone DZ least liable to generate defects is formed in a surface layer zone 12 of a semiconductor wafer 10. In an inner layer zone 18 of the semiconductor wafer 10, micro defects BMD for gettering of impurity metal are made. In the inner layer zone 18, the precipitation of oxygen decreases with the depth. As a result, mechanical strength can be maintained while improving the gettering performance of impurity metal.
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