1-POLY STRUCTURE OF FLASH MEMORY DEVICE, AND MANUFACTURING METHOD THEREOF

摘要

A flash memory device having a 1-poly structure and its manufacturing method are provided to implant or radiate electrons by using an electric charge storage layer having an ONO structure of a spacer type. An active region is defined on a semiconductor substrate(100). A control gate(220a) is formed by inserting a gate insulating layer into the active region of the semiconductor substrate. A tunnel insulating layer(200a) is formed on the active region which is positioned on both sides of the control gate. A sidewall insulating layer(200b) is formed on each of both sidewalls of the control gate. An electric charge storage layer(300a) is formed between the tunnel oxide layer and the sidewall insulating layer at both sides of the control gate. An LDD(Lightly Doped Drain) is formed on the active region of the semiconductor substrate.