| 摘要 |
It is an object to form single-crystalline semiconductor layers with high mobility over approximately the entire surface of a glass substrate even when the glass substrate is increased in size. A first single-crystalline semiconductor substrate is bonded to a substrate having an insulating surface, the first single-crystalline semiconductor substrate is separated such that a first single-crystalline semiconductor layer is left remaining over the substrate having an insulating surface, a second single-crystalline semiconductor substrate is bonded to the substrate having an insulating surface so as to overlap with at least part of the first single-crystalline semiconductor layer provided over the substrate having an insulating surface, and the second single-crystalline semiconductor substrate is separated such that a second single-crystalline semiconductor layer is left remaining over the substrate having an insulating surface.
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