发明名称 |
MANUFACTURING METHOD OF SILICON CARBIDE SUBSTRATE |
摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a silicon carbide substrate capable of obtaining a silicon carbide crystal having little dislocation by suppressing increase of dislocation on a seed substrate main surface.SOLUTION: A manufacturing method of a silicon carbide substrate has following steps. A part of a silicon carbide raw material 8 is sublimed. After the part of the silicon carbide raw material 8 is sublimed, a seed substrate 1 having a main surface 1A is arranged in a growth vessel 10. A silicon carbide crystal 11 is grown on the main surface 1A of the seed substrate 1 by subliming the residue of the silicon carbide raw material 8 in the growth vessel 10.SELECTED DRAWING: Figure 1 |
申请公布号 |
JP2016106070(A) |
申请公布日期 |
2016.06.16 |
申请号 |
JP20160055586 |
申请日期 |
2016.03.18 |
申请人 |
SUMITOMO ELECTRIC IND LTD |
发明人 |
FUJIWARA SHINSUKE;NISHIGUCHI TARO;HORI TSUTOMU;OI NAOKI;UETA SHUNSAKU |
分类号 |
C30B29/36 |
主分类号 |
C30B29/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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