| 摘要 |
Provided is a group III nitride semiconductor element in which cracking is less likely to occur in the group III nitride semiconductor layer after being mounted on an arbitrary substrate, and an increase in the forward voltage due to heating soldering is suppressed. Also provided is a method for manufacturing the group III nitride semiconductor element. This group III nitride semiconductor element (100) has an electroconductive support body (122A) including a main Cu plating layer (130) and having Cu as a main component; a plating seed layer (114) on the electroconductive support body (122A); and a group III nitride semiconductor layer (110) on the plating seed layer (114). The invention is characterized in that between the main Cu plating layer (130) and the group III nitride semiconductor layer (110), the electroconductive support body (122A) and/or the plating seed layer (114) includes a layered body (134, 136) in which a plurality of first layers (134A, 136A) made from a first transition metal and a plurality of second layers (134B, 136B) made from a second transition metal different from the first transition metal are alternately layered. |
