| 摘要 |
A high-thermal-conductivity silicon nitride sintered compact having a thermal conductivity of 50 W/m∙K or higher and a three-point bending strength of 600 MPa or greater, wherein the silicon nitride sintered compact is characterized in that when an arbitrary cross-section of the silicon nitride sintered compact is subjected to XRD analysis, the peak ratio (I29.3°)/(I27.0° + I36.1°) is in the range of 0.01-0.08 and the peak ratio (I29.7°)/(I27.0° + I36.1°) is in the range of 0.02-0.16, where I29.3°, I29.7°, I27.0°, and I36.1° are the strongest peak intensities detected at diffraction angles of 29.3 ±0.2°, 29.7 ±0.2°, 27.0 ±0.2°, and 36.1 ±0.2°, respectively. The above configuration makes it possible to provide a silicon nitride sintered compact having high thermal conductivity of 50 W/m∙K or higher and excellent insulating properties and strength. |
