发明名称 |
NITRIDE SEMICONDUCTOR LAMINATION SUBSTRATE, NITRIDE SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR LAMINATION SUBSTRATE |
摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor lamination substrate, a nitride semiconductor device, and a method of manufacturing a nitride semiconductor lamination substrate, capable of suppressing generation of pits on a nitride semiconductor layer.SOLUTION: A nitride semiconductor lamination substrate 111 comprises: an Si substrate 101 that uses a plane inclined at an off angle equal to or more than 0.11 degrees and equal to or less than 0.50 degrees in a (011) direction from a (111) plane as a principal surface; and at least one nitride semiconductor layer 102, 103 epitaxially grown on the Si substrate 101.SELECTED DRAWING: Figure 1 |
申请公布号 |
JP2016167473(A) |
申请公布日期 |
2016.09.15 |
申请号 |
JP20130146715 |
申请日期 |
2013.07.12 |
申请人 |
SHARP CORP |
发明人 |
OGAWA ATSUSHI;TERAGUCHI NOBUAKI;ITO NOBUYUKI;INOUE YUSHI;OKAZAKI MAI |
分类号 |
H01L21/205;H01L21/338;H01L29/778;H01L29/812 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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