发明名称 NITRIDE SEMICONDUCTOR LAMINATION SUBSTRATE, NITRIDE SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR LAMINATION SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To provide a nitride semiconductor lamination substrate, a nitride semiconductor device, and a method of manufacturing a nitride semiconductor lamination substrate, capable of suppressing generation of pits on a nitride semiconductor layer.SOLUTION: A nitride semiconductor lamination substrate 111 comprises: an Si substrate 101 that uses a plane inclined at an off angle equal to or more than 0.11 degrees and equal to or less than 0.50 degrees in a (011) direction from a (111) plane as a principal surface; and at least one nitride semiconductor layer 102, 103 epitaxially grown on the Si substrate 101.SELECTED DRAWING: Figure 1
申请公布号 JP2016167473(A) 申请公布日期 2016.09.15
申请号 JP20130146715 申请日期 2013.07.12
申请人 SHARP CORP 发明人 OGAWA ATSUSHI;TERAGUCHI NOBUAKI;ITO NOBUYUKI;INOUE YUSHI;OKAZAKI MAI
分类号 H01L21/205;H01L21/338;H01L29/778;H01L29/812 主分类号 H01L21/205
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