发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device which stabilizes a grounded part and has fine high-frequency characteristics. SOLUTION: The semiconductor device comprises a sealing material made of an insulating resin, a semiconductor chip which is located in the sealing material and has transistors that carry out the low noise amplification or power amplification of an input signal, a support which bears the semiconductor chip on the top face thereof and has a ground potential, and a plurality of leads which are arranged in parallel with the support and are connected electrically to prescribed electrodes of the semiconductor chips via connection means. Input terminal leads among the leads, into which an input signal is fed, are surrounded with the support, other leads, and connections connected to the support and the leads. The under surfaces of the support and the leads are exposed at the under surface of the sealing material, which gives the semiconductor a non-lead type structure. The support, leads, and connections are made of a copper material, and are coated with a metal plating film, which has an electric resistance smaller than that of the copper material. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005209770(A) 申请公布日期 2005.08.04
申请号 JP20040012815 申请日期 2004.01.21
申请人 RENESAS TECHNOLOGY CORP 发明人 FUJITA NAOKI
分类号 H01L23/28;H01L23/50;(IPC1-7):H01L23/28 主分类号 H01L23/28
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