| 摘要 |
PROBLEM TO BE SOLVED: To reduce the cost of a semiconductor integrated circuit device with an SBD element. SOLUTION: A manufacturing method for a semiconductor integrated circuit device has a process in which a first semiconductor region and a second semiconductor region are formed on the main surface of a semiconductor substrate 1, the process in which a silicide layer 13 is formed on the surface of the first semiconductor region and a Schottky junction is formed, and the process in which an insulating film 14 is formed on the whole surface of the semiconductor substrate. The manufacturing method further has the process in which first and second connecting holes 15 are formed to the insulating film on the first and second semiconductor regions respectively, the process in which a barrier metal film 16 is formed along the inner wall surfaces and bottoms of the first and second connecting holes, and the process in which a conductive film is formed on the insulating film so as to bury the first and second connecting holes. The manufacturing method further has the process in which the conductive film is etched and a side wall spacer 18c is formed on the inner wall surface of the first connecting hole while conductive plugs 18a and 18d burying the second connecting hole are formed, and the process in which the silicide layer and a wiring connected to the conductive plugs are formed on the insulating film through the first connecting hole. COPYRIGHT: (C)2005,JPO&NCIPI |
