| 摘要 |
PROBLEM TO BE SOLVED: To provide a polishing liquid capable of obtaining high polishing speed to a TEOS insulation film, effectively suppressing polishing speed to a Low-k film even if an insulation film having low strength, such as the Low-k film, is used, and suppressing scratches caused by coagulation, or the like of solid abrasive grains in a substrate having an insulation film where the normal TEOS insulation film and Low-k film are laminated in the polishing liquid using the solid abrasive grains used for chemical mechanical polishing in a planarization process of a semiconductor integrated circuit. SOLUTION: The polishing liquid used for chemical mechanical polishing in a planarization process of a semiconductor integrated circuit contains a quaternary ammonium cation, an organic acid, an inorganic particle, and at least one of a compound expressed by general formula (I) and a polymer including a structure unit shown by the general formula (I), and has a pH of 1 to 7. COPYRIGHT: (C)2009,JPO&INPIT |
