| 摘要 |
PROBLEM TO BE SOLVED: To ensure sufficient ESD resistance of a semiconductor device while preventing increase in power consumption and a chip area.SOLUTION: A semiconductor device includes: a first region in which an input/output circuit transmitting and receiving a signal to and from an external circuit is disposed; and a second region including a first power-supply domain and a second power-supply domain in which internal core circuits other than the input/output circuit and power-supply protection circuits for the internal core circuits are disposed. The number of power-supply protection circuits arrangeable in the second power-supply domain is larger than the number of power-supply protection circuits arrangeable in the first power-supply domain. The thickness of a gate oxide film of a MOSFET included in each of the power-supply protection circuits disposed in the second power-supply domain is thicker than the thickness of a gate oxide film of a MOSFET included in each of the power-supply protection circuits disposed in the first power-supply domain. |
