| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide stable electrical characteristics to a semiconductor device using an oxide semiconductor to achieve high reliability. <P>SOLUTION: A semiconductor device manufacturing method comprises: heating an oxide semiconductor film in an inert gas atmosphere; and subsequently heating the oxide semiconductor film in an oxygen atmosphere. By the processes, an impurity such as hydrogen, moisture, a hydroxyl group and hydride is intentionally removed from the oxide semiconductor film and high purity of the oxide semiconductor film can be achieved. When removing the impurity, there may be deficiency of oxygen that is a main component of the oxide semiconductor, but oxygen can be supplied by the heating in the oxygen atmosphere. <P>COPYRIGHT: (C)2013,JPO&INPIT |
