发明名称 |
Electrostatic discharge protection device and chip component with the same |
摘要 |
Disclosed herein is an electrostatic discharge protection device including: a lower cover; electrodes disposed on the lower cover, being spaced apart from each other; a conductor disposed on the lower cover; and a semiconducting material layer covering the lower cover and the electrodes and formed of a semiconducting material. |
申请公布号 |
US9408285(B2) |
申请公布日期 |
2016.08.02 |
申请号 |
US201414148255 |
申请日期 |
2014.01.06 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
Lee Hong Ryul;Min Kyong Bok;Wi Sung Kwon |
分类号 |
H05F3/00;H05F3/02;H01H47/00;H05F3/04;H01L23/60;H02H9/00 |
主分类号 |
H05F3/00 |
代理机构 |
McDermott Will & Emery LLP |
代理人 |
McDermott Will & Emery LLP |
主权项 |
1. An electrostatic discharge protective device, comprising:
a lower cover; electrodes disposed on the lower cover, being spaced apart from each other; a conductor; and a semiconducting material layer covering the lower cover and the electrodes and formed of a semiconducting material, wherein the semiconducting material includes at least any one of polyacetylene, poly (p-phenylene) (PPP), polypyrrole (PYR), and polyazine (PAZ), and the conductor is distributed within the semiconducting material layer and separated from a boundary surface between the lower cover and the semiconducting material layer. |
地址 |
Suwon, Gyunggi-Do KR |