| 发明名称 |
METHOD OF RECOVERING RESIST PATTERN |
| 摘要 |
A method of recovering a defect portion of a resist pattern formed on a substrate including applying a shrinking agent composition so as to cover the resist pattern having the defect portion; forming a developing solution-insoluble region on the surface of the resist pattern; and developing the covered resist pattern, the shrinking agent composition including a polymeric compound (X) which is a homopolymer or a random copolymer. |
| 申请公布号 |
US2016274464(A1) |
申请公布日期 |
2016.09.22 |
| 申请号 |
US201615071055 |
申请日期 |
2016.03.15 |
| 申请人 |
TOKYO OHKA KOGYO CO., LTD. |
发明人 |
TSUCHIYA Junichi;TSUNODA Rikita;TAKAKI Daichi;SHINOMIYA Miki;FUJISAKI Masafumi |
| 分类号 |
G03F7/40;G03F7/32 |
主分类号 |
G03F7/40 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of recovering a resist pattern, comprising:
applying a shrinking agent composition so as to cover a resist pattern having a defect portion; forming a developing solution-insoluble region on the surface of the resist pattern; and developing the covered resist pattern, wherein the shrinking agent composition including a polymeric compound (X) which is a homopolymer or a random copolymer. |
| 地址 |
Kawasaki-shi JP |
