发明名称 SILICON WAFER FABRICATION METHOD USING O2 PLASMA
摘要 <p>PURPOSE: A method for removing organic contaminants using oxygen plasma and a method for manufacturing a silicon wafer for a solar cell are provided to reduce manufacturing costs by using silicon oxide layer generates in an oxygen plasma process as a mask in a texturing process. CONSTITUTION: A wafer is cut(S-11). Organic contaminants are removed from the surface of the wafer by applying oxygen plasma to the surface of the cut wafer(S-12). A texturing process is performed by using an oxide layer on the surface of the wafer generated in an oxygen plasma process(S-13). [Reference numerals] (S-11) Wafer cutting step; (S-12) Oxygen plasma processing step; (S-13) Texturing step</p>
申请公布号 KR20130010368(A) 申请公布日期 2013.01.28
申请号 KR20110071130 申请日期 2011.07.18
申请人 SEMIMATERIALS. CO., LTD.;PARK, KUN 发明人 PARK, KUN JOO;JANG, YOUNG HOON;KIM, YONG GAB;PARK, KUN
分类号 H01L21/302;H01L31/04;H01L31/18 主分类号 H01L21/302
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