| 摘要 |
A device includes a first magnetic tunnel junction (MTJ) element having a first read margin and a second MTJ element having a second read margin. The first read margin is greater than twice the second read margin. The device also includes an access transistor connected between the first MTJ element and the second MTJ element. A gate of the access transistor is coupled to a word line. The first MTJ element, the second MTJ element, and the access transistor form a multi-bit spin torque transfer magnetoresistive random access memory (STT-MRAM) memory cell. |
