HIGH VOLTAGE NMOS PASS GATE FOR FLASH MEMORY WITH HIGH VOLTAGE GENERATOR,申请号KR19997007909-传众专利搜索

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发明名称	HIGH VOLTAGE NMOS PASS GATE FOR FLASH MEMORY WITH HIGH VOLTAGE GENERATOR
摘要
申请公布号	KR20000075834(A)	申请公布日期	2000.12.26
申请号	KR19997007909	申请日期	1999.08.28
申请人		发明人
分类号	G11C16/06;G11C8/08;G11C16/12	主分类号	G11C16/06
代理机构		代理人
主权项
地址

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