发明名称 |
DEPOSITION OF SILICON-CONTAINING FILMS FROM HEXACHLORODISILANE |
摘要 |
A method is provided for depositing a silicon-containing film on a substrate by a low pressure deposition process in a processing system. A silicon-containing film can be formed on a substrate by providing a substrate in a process chamber of a processing system, heating the substrate, and exposing a hexachlorodisilane (HCD) process gas to the substrate. The method can selectively deposit an epitaxial silicon-containing film on a silicon surface of a substrate or, alternately, non-selectively deposit a silicon-containing film on a substrate. A processing tool containing a processing system for forming a silicon-containing film on s substrate using a HCD process gas is provided. |
申请公布号 |
EP1668668(A2) |
申请公布日期 |
2006.06.14 |
申请号 |
EP20040788551 |
申请日期 |
2004.09.20 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
DIP, ANTHONY;OH, SEUNGHO;LEITH, ALLEN, JOHN |
分类号 |
B05D5/12;C23C16/00;C23C16/22;C23C16/24;C23C16/34;C30B25/02;C30B29/06;H01L21/20;H01L21/205;H01L21/336;H01L21/44;(IPC1-7):H01K7/00 |
主分类号 |
B05D5/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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