TRANSISTOR FOR EOS AND PROTECTION CIRCUIT INCLUDING THE SAME

摘要

An EOS(Electrical Over-Stress) transistor and an ESD(Electro-Static Discharge) protection circuit including the same are provided to form gates of transistors with a connective conductive pattern by using a meandering structure. An active region is formed within a substrate. A plurality of impurity regions(101-109) are formed in a constant interval within the active region of the substrate. A conductive pattern(130) is arranged between the impurity regions to form a meandering shape. A center part of the conductive pattern is connected to a ground terminal. The active region includes a first conductive type. The impurity regions include a second conductive type opposite to the first conductive type. The first conductive type corresponds to a P type.