| 摘要 |
A semiconductor device includes a first well of a first conductive type formed in a surface portion of a semiconductor substrate; a first contact group connected with the first well; a second well of a second conductive type formed to surround the first well in the surface portion of the semiconductor substrate; a first guard ring provided on the second well; a second contact group connected with the first guard ring; a third well of the first conductive type formed to surround the second well in the surface portion of the semiconductor substrate; a second guard ring provided on the third well; and a third contact group connected with the second guard ring. The first to third wells form a transistor, and a current flowing through the transistor is suppressed.
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