| 摘要 |
A method of fabricating structures in an electronic device by forming and patterning a first film layer on a substrate into ridges with a photolithographic system. The ridges are formed from an image produced by a first simple geometry photomask where the first photomask has at least one first slot-like feature. The ridges are patterned into the structures which are essentially rectangular in shape and formed from an image produced by a second simple geometry photomask. The second photomask has at least one second slot-like feature arranged substantially orthogonal to the at least one first slot-like feature on the first photomask. The structures each have at least one dimension less than a limit-of-resolution of the photolithographic system where the dimension is measured in a plane substantially parallel to a face of the substrate.
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