| 摘要 |
PROBLEM TO BE SOLVED: To provide an MTJ element which can write set/reset states in addition to the two values of spin parallel state/spin anti-parallel states. SOLUTION: The magnetic tunneling element includes a pair of ferromagnetic layers and a tunneling barrier layer interposed between the ferromagnetic layers, and has a first function whereby it transits the state between its first resistance state and its second resistance state having a higher resistance than the one of its first resistance state, and further, has a second function whereby it transits the state between its third resistance state having a lower resistance than the one of its first resistance state and its fourth resistance state having a higher resistance than the one of its second resistance state. COPYRIGHT: (C)2009,JPO&INPIT |
