| 摘要 |
PROBLEM TO BE SOLVED: To provide an image sensor and a method for manufacturing the same, which provides a vertical stack structure of a transistor circuit and a photodiode. SOLUTION: The image sensor includes a semiconductor substrate including unit pixels, an interlayer dielectric including metal interconnections formed on the semiconductor substrate, a plurality of bottom electrodes formed on the interlayer dielectric in correspondence with the unit pixels and having different sizes, a photodiode formed on the interlayer dielectric including the bottom electrodes, and color filters formed on the photodiode in correspondence with the unit pixels. COPYRIGHT: (C)2009,JPO&INPIT
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