发明名称 Photovoltaic devices with depleted heterojunctions and shell-passivated nanoparticles
摘要 Photovoltaic cells are fabricated in which the compositions of the light-absorbing layer and the electron-accepting layer are selected such that at least one side of the junction between these two layers is substantially depleted of charge carriers, i.e., both free electrons and free holes, in the absence of solar illumination. In further aspects of the invention, the light-absorbing layer is comprised of dual-shell passivated quantum dots, each having a quantum dot core with surface anions, an inner shell containing cations to passivate the core surface anions, and an outer shell to passivate the inner shell anions and anions on the core surface.
申请公布号 US9382474(B2) 申请公布日期 2016.07.05
申请号 US201012890797 申请日期 2010.09.27
申请人 THE GOVERNING COUNCIL OF THE UNIVERSITY OF TORONTO 发明人 Tang Jiang;Pattantyus-Abraham Andras;Kramer Illan;Barkhouse Aaron;Wang Xihua;Konstantatos Gerasimos;Debnath Ratan;Sargent Edward H.
分类号 C09K11/66;H01L31/0352;H01L31/032;H01L31/072 主分类号 C09K11/66
代理机构 代理人
主权项 1. A photoelectric device comprising: a light-transmitting first electrode, a first semiconductor layer comprising n-type TiO2 and deposited on said first electrode, a second semiconductor layer deposited on said first semiconductor layer and comprising p-type light-absorbing quantum dot nanoparticles, and a second electrode deposited on said second semiconductor layer, said n-type TiO2 and p-type light-absorbing quantum dot nanoparticles forming a photovoltaic junction therebetween, at least one side of which is substantially depleted of free electrons and of free holes when said device is not illuminated.
地址 Toronto CA