| 发明名称 |
THREE DIMENSIONAL MEMORY DEVICE HAVING WELL CONTACT PILLAR AND METHOD OF MAKING THEREOF |
| 摘要 |
A monolithic three dimensional memory device includes a semiconductor substrate having a major surface and a doped well region of a first conductivity type extending substantially parallel to the major surface of the semiconductor substrate, a plurality of NAND memory strings extending substantially perpendicular to the major surface of the semiconductor substrate, and a plurality of substantially pillar-shaped support members extending substantially perpendicular to the major surface of the semiconductor substrate, each support member including an electrically insulating outer material surrounding an electrically conductive core material that extends substantially perpendicular to the major surface of the semiconductor substrate and electrically contacting the doped well region. |
| 申请公布号 |
US2016329341(A1) |
申请公布日期 |
2016.11.10 |
| 申请号 |
US201615216941 |
申请日期 |
2016.07.22 |
| 申请人 |
SANDISK TECHNOLOGIES LLC |
发明人 |
Shimabukuro Seiji;Honma Ryoichi;Ogawa Hiroyuki;Mizutani Yuki;Toyama Fumiaki |
| 分类号 |
H01L27/115;H01L23/522 |
主分类号 |
H01L27/115 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A monolithic three dimensional memory device, comprising:
a semiconductor substrate having a major surface and a doped well region of a first conductivity type extending substantially parallel to the major surface of the semiconductor substrate; a plurality of NAND memory strings extending substantially perpendicular to the major surface of the semiconductor substrate; and a plurality of substantially pillar-shaped support members extending substantially perpendicular to the major surface of the semiconductor substrate, each support member comprising an electrically insulating outer material surrounding an electrically conductive core material that extends substantially perpendicular to the major surface of the semiconductor substrate and electrically contacting the doped well region. |
| 地址 |
PLANO TX US |
