发明名称 APPARATUS AND METHOD FOR REGULATING THE TEMPERATURE IN A PROCESS CHAMBER OF A CVD REACTOR USING TWO TEMPERATURE SENSOR DEVICES
摘要 An apparatus and a method for a thermal treatment, in particular a coating of a substrate, includes a heating device which is regulated by a regulating device which interacts with a first temperature sensor device. In order to counteract a temperature drift of the first temperature sensor device, a second temperature sensor device is used to detect the temperature drift and recalibrate the first temperature sensor device. The second temperature sensor device is used to measure the surface temperature of a substrate. This measured value is compared with a desired value, and if the desired value deviates from the measured actual value, a correction factor is formed and is used to apply the measured value used to regulate the heating device to the first temperature sensor device in order to bring the actual temperature value measured by the second temperature sensor device closer to the associated desired temperature value.
申请公布号 US2016333479(A1) 申请公布日期 2016.11.17
申请号 US201415105515 申请日期 2014.12.15
申请人 AIXTRON SE 发明人 Boyd Adam;Lauffer Peter Sebald;Lindner Johannes;Silva Hugo;Theres Arne
分类号 C23C16/46 主分类号 C23C16/46
代理机构 代理人
主权项 1. An apparatus for a thermal treatment of at least one substrate (9), in particular a coating of the at least one substrate (9), comprising a heating device (11) which is regulated by a regulating device (13) which cooperates with a first temperature sensor device (7, 12) in order to regulate measured values of the first temperature sensor device (7, 12) to a desired treatment temperature, wherein the first temperature sensor device (7, 12) measures a first temperature on an upper side of a susceptor (10) on which the at least one substrate (9) rests during the treatment and comprising a second temperature sensor device (8) which measures a second temperature on an upper side of the substrate (9), wherein the first temperature sensor device (7, 12) is adapted and disposed to measure a surface temperature of the upper side of the susceptor (10) and the second temperature sensor device (8) is sensitive at a shorter wavelength than the first temperature sensor device (7, 12) and is adapted and disposed to measure a surface temperature of the surface of the substrate (9) or of a layer deposited on the surface of the substrate (9), wherein a deviation of the surface temperature of the substrate from the desired treatment temperature is determined using the second temperature sensor device (8) multiple times in each measurement interval during the thermal treatment, wherein the surface temperature of the substrate deviates from the desired treatment temperature by a temperature difference which varies during the thermal treatment, and wherein a correcting intervention is made to a temperature regulation of the regulating device (13) in order to bring the surface temperature of the substrate to the desired treatment temperature.
地址 Herzogenrath DE