STATE MONITORING METHOD FOR PLASMA PROCESSING APPARATUS, AND STATE MONITORING STRUCTURE FOR PLASMA PROCESSING APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a state monitoring method for a plasma processing apparatus and a state monitoring structure for a plasma processing apparatus that achieve a simple configuration and that can monitor a state of the plasma processing apparatus comprehensively.SOLUTION: A state monitoring structure 1, as one example of a state monitoring structure for a plasma processing apparatus, to which the present invention is applied, comprises: an RF power supply 2; a directional coupler 3; oscillation measurement means 4; an automatic matching circuit 5; and a process chamber 6. The plasma processing apparatus has the process chamber 6 as a plasma processing chamber. Plasma is formed in the process chamber 6, and etching processing is performed on a semiconductor wafer arranged in the chamber.SELECTED DRAWING: Figure 1