| 发明名称 |
AGING SENSOR FOR A STATIC RANDOM ACCESS MEMORY (SRAM) |
| 摘要 |
A static random access memory (SRAM) includes a first bitcell and a second bitcell. The first bitcell includes an aging transistor and the second bitcell includes a non-aging transistor. An aging sensor is coupled between the first bitcell and the second bitcell to determine an amount of aging associated with the aging transistor. In one aspect, the amount of aging associated with the aging transistor is determined based on a difference between a voltage or current associated with the aging transistor and a voltage or current associated with the non-aging transistor. |
| 申请公布号 |
US2016351250(A1) |
申请公布日期 |
2016.12.01 |
| 申请号 |
US201514720930 |
申请日期 |
2015.05.25 |
| 申请人 |
QUALCOMM Incorporated |
发明人 |
NARAYANAN Venkatasubramanian;PARK Alex Dongkyu |
| 分类号 |
G11C11/417;H01L27/11 |
主分类号 |
G11C11/417 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A static random-access memory (SRAM) array, comprising:
a first bitcell having an aging transistor; a second bitcell having a non-aging transistor; and an aging sensor coupled between the first bitcell and the second bitcell, wherein the aging sensor is configured to determine an amount of aging associated with the aging transistor based on a difference between a voltage or a current associated with the aging transistor and a voltage or a current associated with the non-aging transistor. |
| 地址 |
San Diego CA US |
