| 摘要 |
An internal voltage generator is disclosed. The internal voltage generator according to the present invention includes a state decoder for outputting a state signal which indicates an operation state of a semiconductor device, a clock cycle time detection unit for detecting a clocking cycle time and outputting the same, a mode decoder for decoding the operation mode and outputting a column address strobe latency, a controller for generating a driving signal and a plurality of control signals for generating an internal voltage using the outputs of the state decoder, the clock cycle time detection unit and the mode decoder, and an internal voltage generation unit for generating an internal voltage based on the driving signal and a plurality of the control signals of the controller, for thereby effectively decreasing a current consumption by selectively driving an internal voltage generation circuit based on an operation state of a semiconductor device and a current consumption variable such as a clock cycle time(tCK), a column address strobe latency, etc.
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