发明名称 Semiconductor device and manufacture thereof
摘要 Method and system of interconnecting conductive elements includes forming a lower conductive element (14) having a lower contact section (22) with a width (24) not more than substantially that of an adjacent section (26) of the lower conductive element (14). A first insulation layer (18) may be formed outwardly of the lower conductive element (14). An upper conductive element (16) may be formed outwardly of the first insulation layer (18). The upper conductive element (16) may have a upper contact section (28) with a width (30) not more than substantially that of an adjacent section (32) of the upper conductive element (16). A second insulation layer (20) may be formed outwardly of the first insulation layer (18) and the upper conductive element (16). A contact hold (40) may be formed in the first and second insulation layers (18, 20) exposing a lower contact area (42) of the lower contact section (22) and an upper contact area (44) of the upper contact section (28). An interconnect (54) may be formed in the contact hole (40) connecting the contact areas (42, 44) of the lower and upper conductive elements (14, 16). The interconnect (54) may have a substantially uniform width (56) between the lower and upper conductive elements (14, 16).
申请公布号 US2001044199(A1) 申请公布日期 2001.11.22
申请号 US20010838923 申请日期 2001.04.20
申请人 TEXAS INSTRUMENTS INC. 发明人 MIYAI YOICHI
分类号 H01L23/522;H01L21/768;H01L21/8242;H01L27/108;(IPC1-7):H01L21/824;H01L21/476;H01L29/40;H01L23/48;H01L23/52 主分类号 H01L23/522
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