发明名称 GAS SENSOR AND FABRICATION METHOD THEREOF
摘要 PURPOSE: Provided are gas sensor with an enhanced sensitivity, low power consumption, a low heat capacity and heat loss, and its fabrication method, wherein a heating line and a sensing line are formed being apart from a substrate by using a semiconductor manufacturing process and a ceramic bulk of gas sensitive material are formed extending over the heat and the sensing lines. CONSTITUTION: The gas sensor comprises: a silicon substrate provided with a recess formed by patterning into a predetermined depth; an insulating layer formed on top of the silicon substrate except the recess; a first conductive patterned layer crossing the recess and being fixed to the insulating layer, to electrically be isolated from the silicon substrate; a second conductive patterned layer patterned layer crossing the recess and being fixed to the insulating layer, to electrically be isolated from the silicon substrate and the first conductive patterned layer; and a gas detecting portion formed on both predetermined portions of the first and the second conductive patterned layers.
申请公布号 KR20020060694(A) 申请公布日期 2002.07.18
申请号 KR20027002442 申请日期 2002.02.25
申请人 SEJU ENG. 发明人 LEE, HO JUN;LEE, WON BAE
分类号 B81C1/00;B81B3/00;G01N27/12;(IPC1-7):G01N27/12 主分类号 B81C1/00
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