| 摘要 |
PURPOSE: To provide a semiconductor device for realizing low cost, along with its manufacturing method. CONSTITUTION: The semiconductor device includes a first electrode 32, a ferroelectric film 36 formed on the first electrode 32, and a second electrode 40 formed on the ferroelectric film 36. In this case, the semiconductor device includes middle layers 34 and 38 having a perovskite-based crystal structure and formed in at least one position between the first electrode 32 and the ferroelectric film 36 or between the ferroelectric film 36 and the second electrode 40.
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