发明名称 Defined sacrifical region via ion implantation for micro-opto-electro-mechanical system (MOEMS) applications
摘要 The present invention discloses an electro-optical device support on a substrate. The electro-optical device includes a sacrificial layer disposed on the substrate having a chamber-wall region surrounding and defining an optical chamber. The electro-optical device further includes a membrane layer disposed on top of the sacrificial layer having a chamber-removal opening surrounding and defining an electric tunable membrane for transmitting an optical signal therethrough. The electrically tunable membrane disposed on top of the optical chamber surrounded by the chamber wall regions. The chamber-wall region is doped with iondopants for maintaining the chamber-wall region for removal-resistance under a chamber-forming process performed through the chamber-removal opening. In a preferred embodiment, the chamber-wall region is a doped silicon dioxide region with carbon or nitrogen. In another preferred embodiment, the chamber-wall region is a nitrogen ion-doped SiNxOy region. In another preferred embodiment, the optical chamber is an etched chamber formed by etching through the chamber removal opening for etching off an etch-enhanced region surrounded by an etch-resistant region constituting the chamber wall.
申请公布号 US2002110948(A1) 申请公布日期 2002.08.15
申请号 US20010011350 申请日期 2001.11.12
申请人 INTPAX, INC. 发明人 HUANG LIJI;HAN NAIQIAN;YAO YAHONG;WANG GAOFENG
分类号 B81B3/00;(IPC1-7):H01L27/15;H01L31/12;H01L33/00;H01L21/265;H01L21/00 主分类号 B81B3/00
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