发明名称 Methods of fabricating embedded flash memory devices
摘要 A method of fabricating a compound device includes forming a first gate insulating pattern on a semiconductor substrate including a first region and a second region, forming a second gate insulating layer on the first gate insulating pattern, and after forming the second gate insulating layer, forming a well in the second region of the semiconductor substrate.
申请公布号 US2008050875(A1) 申请公布日期 2008.02.28
申请号 US20060645576 申请日期 2006.12.27
申请人 MOON JUNG-HO;KWON CHUL-SOON;YU JAE-MIN;JEONG YOUNG-CHEON;YOON IN-GU;LIM BYEONG-CHEOL 发明人 MOON JUNG-HO;KWON CHUL-SOON;YU JAE-MIN;JEONG YOUNG-CHEON;YOON IN-GU;LIM BYEONG-CHEOL
分类号 H01L21/336 主分类号 H01L21/336
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