发明名称 |
Methods of fabricating embedded flash memory devices |
摘要 |
A method of fabricating a compound device includes forming a first gate insulating pattern on a semiconductor substrate including a first region and a second region, forming a second gate insulating layer on the first gate insulating pattern, and after forming the second gate insulating layer, forming a well in the second region of the semiconductor substrate.
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申请公布号 |
US2008050875(A1) |
申请公布日期 |
2008.02.28 |
申请号 |
US20060645576 |
申请日期 |
2006.12.27 |
申请人 |
MOON JUNG-HO;KWON CHUL-SOON;YU JAE-MIN;JEONG YOUNG-CHEON;YOON IN-GU;LIM BYEONG-CHEOL |
发明人 |
MOON JUNG-HO;KWON CHUL-SOON;YU JAE-MIN;JEONG YOUNG-CHEON;YOON IN-GU;LIM BYEONG-CHEOL |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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