SOLID STATE IMAGING DEVICE, SOLID STATE IMAGING DEVICE DRIVE METHOD, AND IMAGING DEVICE

摘要

A CMOS sensor having a column-parallel ADC can execute a high-speed high-resolution AD conversion. The CMOS image sensor (10) having the column-parallel ADC uses reference voltages Vref1 to Vref4 and a reference voltage Vref5 having different slope inclinations. The CMOS image sensor (10) includes: a comparison circuit (32) which compares an output voltage Vx of a unit pixel (11) to the reference voltage Vref 1 to Vref 4; and a comparison circuit (33) which compares the reference voltages Vref1 to Vref4 to the reference voltage Vref5. The comparison circuit (32) and the comparison circuit (33) are arranged in a column processing circuit (15). By operating the comparison circuits (32, 33) and an up/down counter (34), it is possible to execute a high-speed high-resolution AD conversion.