TUNNELING MAGNETORESISTIVE ELEMENT WHICH INCLUDES Mg-O BARRIER LAYER AND IN WHICH NONMAGNETIC METAL SUBLAYER IS DISPOSED IN ONE OF MAGNETIC LAYERS

摘要

In a tunneling magnetoresistive element, an insulating barrier layer is made of Mg-O, and a first pinned magnetic layer has a laminated structure in which a nonmagnetic metal sublayer made of Ta is interposed between a lower ferromagnetic sublayer and an upper ferromagnetic sublayer. The nonmagnetic metal sublayer has an average thickness of about 1 Å or more and about 5 Å or less.