| 摘要 |
PROBLEM TO BE SOLVED: To stably manufacture a semiconductor device by effectively preventing erosion and dishing in a semiconductor device including high-frequency wiring, and reduce an influence on the high-frequency wiring from a surrounding dummy metal to improve characteristics.SOLUTION: A semiconductor device 100 comprises: high-frequency wiring 102 provided in a multilayer wiring layer on a semiconductor substrate; and dummy metals 104 provided in a second wiring layer 122b in the multilayer wiring layers, between the semiconductor substrate and the layer in which the high-frequency wiring 102 is provided. The dummy metals 104 are dispersedly arranged in a high-frequency wiring near-field region 110 including a first region 106 surrounded by an outer edge of the high-frequency wiring 102 and a second region 108 around the first region 106, and an external region 112 other than the high-frequency wiring near-field region 110 in planar view. An average interval of the dummy metals 104 in the high-frequency wiring near-field region 110 is wider than an average interval of the dummy metals 104 in the external region 112. |
