| 主权项 |
1. An image sensing system comprising
a plurality of pixels arranged in an image sensing region which is a quadrilateral having a first side and a second side facing the first side, the plurality of pixels each including a photoelectric conversion portion, wherein the plurality of pixels include a first pixel disposed at a location closer to the first side than the second side, a second pixel disposed at a location closer to the second side than the first side, a third pixel adjacent to the first pixel on a first-side side of the first pixel, a fourth pixel adjacent to the second pixel on a second-side side of the second pixel, a fifth pixel adjacent to the first pixel on a second-side side of the first pixel, and a sixth pixel adjacent to the second pixel on a first-side side of the second pixel, wherein a photoelectric conversion portion of the first pixel includes a first accumulation region which is a first conductivity-type semiconductor region that accumulates a signal electric charge, wherein a first isolation region which is a second conductivity-type semiconductor region is provided between the photoelectric conversion portion of the first pixel and a photoelectric conversion portion of the third pixel, a second isolation region which is a second conductivity-type semiconductor region is provided between the photoelectric conversion portion of the first pixel and a photoelectric conversion portion of the fifth pixel, the first isolation region and the second isolation region are disposed at locations deeper from a light-receiving surface than the first accumulation region, and a distance between the first accumulation region and the first isolation region is larger than a distance between the first accumulation region and the second isolation region, wherein a photoelectric conversion portion of the second pixel includes a second accumulation region which is a first conductivity-type semiconductor region that accumulates a signal electric charge, and wherein a third isolation region which is a second conductivity-type semiconductor region is provided between the photoelectric conversion portion of the second pixel and a photoelectric conversion portion of the fourth pixel, a fourth isolation region which is a second conductivity-type semiconductor region is provided between the photoelectric conversion portion of the second pixel and a photoelectric conversion portion of the sixth pixel, the third isolation region and the fourth isolation region are disposed at locations deeper from the light-receiving surface than the second accumulation region, and a distance between the second accumulation region and the third isolation region is larger than a distance between the second accumulation region and the fourth isolation region. |
