SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

The present disclosure relates to a semiconductor device and a method of manufacturing the same. The semiconductor device may include a first metal gate electrode provided in a NMOS region of a substrate; and a second metal gate electrode provided in a PMOS region of the substrate, wherein the first and second metal gate electrodes may be formed of TiN material or TiAlN material. Here, the first metal gate electrode may have a higher titanium (Ti) content than the second metal gate electrode, and the second metal gate electrode may have a higher nitrogen (N) content than the first metal gate electrode.

主权项

1. A semiconductor device comprising:
a first metal gate electrode provided in a NMOS region of a substrate; and a second metal gate electrode provided in a PMOS region of the substrate, wherein the first and the second metal gate electrodes includes first and second TiN-based layers, respectively, wherein the first TiN-based layer has a higher titanium (Ti) content than the second TiN-based layer, and wherein the second TiN-based layer has a higher nitrogen (N) content than the first TiN-based layer.