发明名称 |
Process for forming a ceramic oxide material with a pyrochlore structure having a high dielectric constant and implementation of this process for applications in microelectronics |
摘要 |
The invention relates to a process for forming a lead-based ceramic oxide dielectric material comprising at least one pyrochlore crystalline phase, which process comprises the following steps: a) a step of depositing at least one amorphous layer of said lead-based ceramic oxide material on a substrate; and b) a crystallization annealing step carried out on said amorphous layer at a temperature not exceeding 550° C., by means of which a lead-based ceramic oxide dielectric material comprising at least one pyrochlore phase is obtained. Application to the fabrication of capacitors on integrated circuits. |
申请公布号 |
US9406439(B2) |
申请公布日期 |
2016.08.02 |
申请号 |
US200912564854 |
申请日期 |
2009.09.22 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE |
发明人 |
Zhu Xiaohong;Defay Emmanuel;Fribourg-Blanc Eric |
分类号 |
C23C14/24;H01G4/12;C23C14/08;C23C14/56;C23C14/58 |
主分类号 |
C23C14/24 |
代理机构 |
Nixon Peabody LLP |
代理人 |
Nixon Peabody LLP ;Shami Khaled |
主权项 |
1. Process for forming a lead-based ceramic oxide dielectric material comprising at least one pyrochlore crystalline phase chosen from lead niobate, lead magnesium niobate and a solid solution resulting from a mixture of lead magnesium niobate and lead titanate, which process comprises the following steps:
a) a step of depositing at least one amorphous layer of said lead-based ceramic oxide material on a substrate; and b) a crystallization annealing step carried out on said amorphous layer at a temperature less than 550° C., by means of which a lead-based ceramic oxide dielectric material comprising at least one pyrochlore phase is obtained. |
地址 |
Paris FR |