Ferroelectric field-effect transistor

摘要

The present invention relates to a ferroelectric field-effect transistor device comprising: a semiconductor layer 201; a ferroelectric layer 202; and characterized by an ion conductor layer 203 arranged between said semiconductor layer and said ferroelectric layer and in contact with the semiconductor layer. The present invention further relates to methods for producing the ferroelectric field-effect transistor device and the use of the ferroelectric field-effect transistor device in non-volatile memory devices.